- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
6,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 20V MICRO FOOT | +/- 8 V | SMD/SMT | MicroFoot-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.7 A | 0.017 Ohms | - 0.9 V | 81 nC | Enhancement | |||
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GET PRICE |
16,630
In-stock
|
Vishay Semiconductors | MOSFET 60V 12A 6.8W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.017 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | ||
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GET PRICE |
800
In-stock
|
Vishay Semiconductors | MOSFET 100V 47A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 0.017 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET |
