Build a global manufacturer and supplier trusted trading platform.
15 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX120N65X2
GET PRICE
RFQ
432
In-stock
IXYS MOSFET MOSFET 650V/120A Ultra Junction X2 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 120 A 24 mOhms 2.7 V 225 nC Enhancement  
IRFS7437TRL7PP
GET PRICE
RFQ
1,767
In-stock
IR / Infineon MOSFET 40V 195A 1.5mOhm 150nC StrongIRFET   SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 295 A 1.4 mOhms 3.9 V 225 nC Enhancement StrongIRFET
IXTT16N10D2
GET PRICE
RFQ
135
In-stock
IXYS MOSFET D2 Depletion Mode Power MOSFETs 20 V SMD/SMT TO-268-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 16 A 64 mOhms   225 nC Depletion  
IXFK120N65X2
GET PRICE
RFQ
50
In-stock
IXYS MOSFET MOSFET 650V/120A Ultra Junction X2 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 120 A 24 mOhms 2.7 V 225 nC Enhancement  
IPB180N04S4-H0
GET PRICE
RFQ
385
In-stock
Infineon Technologies MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 180 A 900 uOhms 2 V 225 nC Enhancement OptiMOS
IXFX32N100P
GET PRICE
RFQ
60
In-stock
IXYS MOSFET 32 Amps 1000V 0.32 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 32 A 320 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
IXFR26N120P
GET PRICE
RFQ
28
In-stock
IXYS MOSFET 32 Amps 1200V 0.46 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1200 V 15 A 500 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
IRFSL7437PBF
GET PRICE
RFQ
100
In-stock
IR / Infineon MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262   Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 250 A 1.8 mOhms 3.9 V 225 nC Enhancement StrongIRFET
IXFK32N100P
GET PRICE
RFQ
3
In-stock
IXYS MOSFET 32 Amps 1000V 0.32 Rds 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 32 A 320 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
APT20M38BVRG
GET PRICE
RFQ
30
In-stock
Microsemi MOSFET Power MOSFET - MOS5 30 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 200 V 67 A 38 mOhms 2 V 225 nC Enhancement  
APT30M70BVRG
GET PRICE
RFQ
42
In-stock
Microsemi MOSFET Power MOSFET - MOS5 30 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 300 V 48 A 70 mOhms 2 V 225 nC Enhancement  
IRFS7437TRLPbF
GET PRICE
RFQ
80,000
In-stock
IR / Infineon MOSFET 40V 195A 1.8mOhm 150nC StrongIRFET   SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 250 A 1.8 mOhms 3.9 V 225 nC Enhancement StrongIRFET
IXFN32N100P
GET PRICE
RFQ
30
In-stock
IXYS MOSFET 32 Amps 1000V 0.32 Rds 30 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 27 A 320 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
IPB180N04S4H0ATMA1
GET PRICE
RFQ
900
In-stock
Infineon Technologies MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 180 A 900 uOhms 2 V 225 nC Enhancement  
IRFS7437-7PPBF
GET PRICE
RFQ
95
In-stock
IR / Infineon MOSFET 40V, 195A, 1.4 mOhm 150 nC Qg, D2-7pin   SMD/SMT TO-263-7 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 295 A 1.4 mOhms   225 nC   StrongIRFET
Page 1 / 1