- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
14,120
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 90 mOhms | 8.2 nC | Enhancement | ||||
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GET PRICE |
2,955
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.1 A | 3.28 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS | ||
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GET PRICE |
8,860
In-stock
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Nexperia | MOSFET 12V N-Channel Trench MOSFET | 8 V | SMD/SMT | WLCSP-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 5 A | 57 mOhms | 400 mV | 8.2 nC | Enhancement | |||
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GET PRICE |
1,233
In-stock
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onsemi | MOSFET NFET DPAK 30V 38A 11MOHM | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 11.6 A | 21 mOhms | 2.5 V | 8.2 nC | |||||||
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GET PRICE |
3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enhancement Mode | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 70 mOhms | - 3 V | 8.2 nC | Enhancement | |||
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GET PRICE |
1,853
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 8.8A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | |||
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GET PRICE |
1,284
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 3.1A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1,500
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 8.8A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1,386
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 3.1A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS |
