- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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27,273
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 94 mOhms | - 0.3 V to - 1 V | 14.1 nC | ||||
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869
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.8 mOhms | 1.1 V | 14.1 nC | NexFET | |||
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3,760
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 3.9A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.9 A | 855 mOhms | 3.5 V | 14.1 nC | Enhancement | CoolMOS | ||
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GET PRICE |
2,440
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 3.9A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.9 A | 855 mOhms | 3.5 V | 14.1 nC | Enhancement |
