- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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41
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 130 A | 19 mOhms | 2 V | 975 nC | Enhancement | ||||
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10
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 25 A | 350 mOhms | 3 V | 186 nC | Enhancement | ||||
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16
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 49 A | 75 mOhms | 2.5 V | 330 nC | Enhancement | ||||
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13
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 70 A | 40 mOhms | 2 V | 425 nC | Enhancement | ||||
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7
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 1000 V | 21 A | 380 mOhms | 3 V | 260 nC | Enhancement | |||
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6
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 130 A | 19 mOhms | 2 V | 975 nC | Enhancement | ||||
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5
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 31 A | 120 mOhms | 3 V | 215 nC | Enhancement | ||||
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4
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 70 A | 40 mOhms | 2 V | 425 nC | Enhancement |
