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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | |
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13,627
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Toshiba | MOSFET N-Ch Sm Sig FET 4A 30V 2-in-1 | SMD/SMT | uDFN-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 112 mOhms | 1 V |
