- Manufacture :
- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
4,352
In-stock
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IR / Infineon | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | ||
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GET PRICE |
2,688
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 3.9 A, - 3.9 A | 70 mOhms, 70 mOhms | - 3 V | 11 nC | Enhancement | ||
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GET PRICE |
4,000
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | - 3 V | 26 nC |
