- Mounting Style :
- Packaging :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,201
In-stock
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Nexperia | MOSFET N-CH DMOS 200V 0.4A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 400 mA | 1.6 Ohms | Enhancement | ||||
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16,109
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | ||||
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GET PRICE |
3,580
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | ||||
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GET PRICE |
11,192
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 2 V | Enhancement | |||
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GET PRICE |
773
In-stock
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onsemi | MOSFET NFET SOT223 400V 1.7A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 400 mA | 4.5 Ohms | 800 mV | 5.5 nC | Enhancement | ||
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GET PRICE |
491
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 400mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 400 mA | 3.1 Ohms | 2.1 V | - | Enhancement | ||
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GET PRICE |
5,064
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement | ||
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GET PRICE |
3,174
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 1.2 V | - | Enhancement | ||
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GET PRICE |
6,000
In-stock
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Toshiba | MOSFET Small-signal Nch MOSFET ID:0.4A | 20 V | SMD/SMT | SOT-346-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||
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GET PRICE |
4,174
In-stock
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Toshiba | MOSFET Small Signal Mosfet | 20 V | SOT-23-3 | Reel | Si | N-Channel | 60 V | 400 mA | 1.75 Ohms | 2.1 V | ||||||||
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2,999
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 400mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 400 mA | 3.1 Ohms | 2.1 V | - | Enhancement | ||
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GET PRICE |
60,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 500 mOhms | 1.1 V | Enhancement | |||
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GET PRICE |
10,000
In-stock
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Toshiba | MOSFET Small-signal Nch MOSFET | 20 V | SMD/SMT | CST3-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.4 Ohms | 1 V | 0.55 nC | Enhancement |
