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Package / Case :
Packaging :
Vgs th - Gate-Source Threshold Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRFR4104PBF
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561
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Infineon Technologies MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms 2 V to 4 V 59 nC Enhancement
AUIRFU4104
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194
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Infineon Technologies MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms 20 V Through Hole TO-251-3 - 55 C   Tube 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms   59 nC Enhancement
IRFR4104TRLPBF
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RFQ
Infineon Technologies MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms 4 V 59 nC Enhancement
AUIRFR4104TRL
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RFQ
Infineon Technologies MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms 20 V SMD/SMT TO-252-3 - 55 C   Reel 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms   59 nC Enhancement
IRFR4104TRRPBF
VIEW
RFQ
Infineon Technologies MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms 4 V 59 nC Enhancement
AUIRFR4104
VIEW
RFQ
Infineon Technologies MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms 20 V SMD/SMT TO-252-3 - 55 C   Tube 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms   59 nC Enhancement
AUIRFR4104TRR
VIEW
RFQ
IR / Infineon MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms 20 V SMD/SMT TO-252-3 - 55 C   Reel 1 Channel Si N-Channel 40 V 119 A 5.5 mOhms   59 nC Enhancement
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