- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,212
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
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4,829
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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4,760
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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3,740
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
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GET PRICE |
49,800
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 8.1 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | ||
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GET PRICE |
16,970
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 8.1 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS | ||
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1,375
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 7 mOhms | 2.2 V | 13.7 nC | Enhancement | ||||
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2,906
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 4.2 mOhms | Enhancement | OptiMOS | |||||
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4,950
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.7 mOhms | 1.2 V | 35 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.7 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 40A 47W 1920pF | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 10.3 mOhms | 2.3 V | 29 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 FL | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.4 mOhms | 2 V | 37 nC | OptiMOS |
