- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,015
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||||
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2,662
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | |||||||||
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GET PRICE |
68,250
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
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331
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | ||||||
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147
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 202 A | 4 mOhms | 131 nC | Enhancement | |||||||
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571
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 4 mOhms | 2 V | 41 nC | Enhancement | OptiMOS | ||||
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690
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1.4 V | 41 nC | Enhancement | |||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 4 mOhms | 2 V | 41 nC | Enhancement | OptiMOS | ||||
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800
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1 V to 2.5 V | 80 nC | ||||||
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40
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | ||||||
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6
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 1 V to 3 V | 93.3 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement |