- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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8,556
In-stock
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Fairchild Semiconductor | MOSFET 30V DUAL N-CH. FET 18 MO SO8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 17 mOhms | Enhancement | PowerTrench SyncFET | ||||
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120,000
In-stock
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IR / Infineon | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC | |||||||
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293
In-stock
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IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC |
