- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,556
In-stock
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Fairchild Semiconductor | MOSFET 30V DUAL N-CH. FET 18 MO SO8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 17 mOhms | Enhancement | PowerTrench SyncFET | ||||||
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100
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | |||||
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2,750
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 38 A | 17 mOhms | Enhancement | PowerTrench | ||||||
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5,598
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | ||||||
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7,337
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||||
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629
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||||
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4,836
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 17 mOhms | Enhancement | |||||||
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120,000
In-stock
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IR / Infineon | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC | |||||||||
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VIEW | Diodes Incorporated | MOSFET Single -30V P-Ch Enh FET -20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 17 mOhms | - 1 V | 60.4 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 200V 105A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 105 A | 17 mOhms | Enhancement | HyperFET | ||||||
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293
In-stock
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IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC |