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Maximum Operating Temperature :
Packaging :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFHM8334TRPBF
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RFQ
4,000
In-stock
Infineon Technologies MOSFET 30V SGL N-CH HEXFET Pwr MOSFET 20 V SMD/SMT PQFN-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 13 A 11.2 mOhms 1.8 V 15 nC   SmallPowIR
IRFR7746TRPBF
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RFQ
1,947
In-stock
Infineon Technologies MOSFET 75V Single N-Channel HEXFET 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 56 A 11.2 mOhms 3.7 V 59 nC   StrongIRFET
IPD50N08S4-13
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RFQ
2,395
In-stock
Infineon Technologies MOSFET N-CHANNEL 75/80V 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 50 A 11.2 mOhms 2 V 30 nC Enhancement  
IRFR7746PBF
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RFQ
925
In-stock
Infineon Technologies MOSFET 75V Single N-Channel HEXFET 20 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 56 A 11.2 mOhms 3.7 V 59 nC   StrongIRFET
IRF9321TRPBF
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RFQ
4,000
In-stock
IR / Infineon MOSFET MOSFT P-Ch -30V -15A 7.2mOhm 20 V SMD/SMT SO-8     Reel   Si P-Channel - 30 V - 15 A 11.2 mOhms   34 nC    
IPD50N08S413ATMA1
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RFQ
Infineon Technologies MOSFET N-CHANNEL 75/80V 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 50 A 11.2 mOhms 2 V 30 nC Enhancement  
IRF9321PBF
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RFQ
2,729
In-stock
IR / Infineon MOSFET 1 P-CH -30V HEXFET 7.2mOhms 34nC 20 V SMD/SMT SO-8     Tube   Si P-Channel - 30 V - 15 A 11.2 mOhms   34 nC    
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