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Technology :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFB3006PBF
1+
$3.500
10+
$2.970
100+
$2.580
250+
$2.450
RFQ
301
In-stock
IR / Infineon MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg 20 V Through Hole TO-220-3     Tube   Si N-Channel 60 V 270 A 2.1 mOhms   200 nC    
IXFP270N06T3
1+
$3.980
10+
$3.380
100+
$2.930
250+
$2.780
RFQ
30
In-stock
IXYS MOSFET 60V/270A TrenchT3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 60 V 270 A 3.1 mOhms 2 V 200 nC Enhancement HiPerFET
IRFB3006GPBF
1+
$2.910
10+
$2.470
100+
$2.150
250+
$2.040
RFQ
399
In-stock
Infineon Technologies MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB 20 V Through Hole TO-220-3     Tube   Si N-Channel 60 V 270 A 2.1 mOhms   200 nC    
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