- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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479
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 7.6A TO220-3 CoolMOS CE | 20 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | |||||
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969
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 35 V, 35 V | 5.3 A, 5 A | 65 mOhms, 65 mOhms | 18.7 nC | Enhancement | ||||
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197
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | |||||
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GET PRICE |
45
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 24A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 450 mOhms | 2.5 V | 18.7 nC | Enhancement | CoolMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS |
