- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
229
In-stock
|
IXYS | MOSFET 188 Amps 200V 0.0105 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 188 A | 10.5 mOhms | HyperFET | ||||||
|
|
43
In-stock
|
IXYS | MOSFET 100Amps 200V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 100 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | Linear L2 | ||||
|
|
42
In-stock
|
IXYS | MOSFET 140 Amps 200V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 115 A | 18 mOhms | 5 V | 240 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
1,262
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | 5 V | 378 nC | Enhancement | GigaMOS | |||
|
|
VIEW | IXYS | MOSFET 200V 180A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 180 A | 6 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 200V 120A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 200V 106A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 106 A | 20 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 100 Amps 200V 0.023 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 100 A | 23 mOhms | Enhancement | HyperFET |
