- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,657
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12.5 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | |||
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1,815
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 12.5 mOhms | 1 V | 34 nC | Enhancement | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 8 A | 21 mOhms | 1 V | 27 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 12 mOhms | - 1 V | 24 nC | Enhancement |
