- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,950
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 18.3 mOhms, 18.3 mOhms | 1 V, 1 V | 10 nC, 10 nC | Enhancement | OptiMOS | ||
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GET PRICE |
1,500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 18.3 mOhms, 18.3 mOhms | 1 V, 1 V | 10 nC, 10 nC | Enhancement | OptiMOS | ||
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GET PRICE |
9,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 20 V, 20 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 20 mOhms, 20 mOhms | 1 V, 1 V | 7 nC, 7 nC | Enhancement |
