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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,355
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 950mA SOT-363-6 | 12 V, 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 950 mA, 950 mA | 266 mOhms, 266 mOhms | 700 mV, 700 mV | 320 pC, 320 pC | Enhancement | ||
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5,548
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 950mA SOT-363-6 | 12 V, 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 950 mA, 950 mA | 266 mOhms, 266 mOhms | 700 mV, 700 mV | 320 pC, 320 pC | Enhancement | ||
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GET PRICE |
8,443
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 950mA SOT-363-6 | 12 V, 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 950 mA, 950 mA | 266 mOhms, 266 mOhms | 700 mV, 700 mV | 320 pC, 320 pC | Enhancement |
