- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,000
In-stock
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Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 0.2 Ohms, 0.2 Ohms | 0.45 V, 0.45 V | 1.25 nC, 1.25 nC | Enhancement | ||||
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15,119
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.5 A, - 1.5 A | 108 mOhms, 102 mOhms | 700 mV, - 1.2 V | 730 pC, - 3 nC | Enhancement | ||||
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3,823
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 5.1 A, - 3.2 A | 41 mOhms, 97 mOhms | 800 mV, - 1.4 V | 2.8 nC, - 4.5 nC | Enhancement | ||||
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5,828
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.5 A, - 1.5 A | 108 mOhms, 102 mOhms | 700 mV, - 1.2 V | 730 pC, - 3 nC | Enhancement | ||||
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11,066
In-stock
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Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | ||||
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11,319
In-stock
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Diodes Incorporated | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | +/- 12 V, +/- 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.8 A, - 2.5 A | 34 mOhms, 70 mOhms | 500 mV, - 1.2 V | 12.3 nC, 13.8 nC | Enhancement | ||||
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11,665
In-stock
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Infineon Technologies | MOSFET P-Ch DPAK-2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | ||||
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7,424
In-stock
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Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | ||||
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3,415
In-stock
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Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | ||||
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4,915
In-stock
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Infineon Technologies | MOSFET P-Ch | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | ||||
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5,475
In-stock
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onsemi | MOSFET PFET SC88 20V 88MA 2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1 A, - 1 A | 215 mOhms, 215 mOhms | - 1.2 V, - 1.2 V | 2.2 nC, 2.2 nC | Enhancement | ||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.78 A, 0.78 A | 0.2 Ohms, 0.2 Ohms | 0.6 V, 0.6 V | 1.2 nC, 1.2 nC | Enhancement | ||||
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431
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 55 mOhms, 55 mOhms | - 1.1 V, - 1.1 V | 6.5 nC, 6.5 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 5.1 A, - 3.2 A | 41 mOhms, 97 mOhms | 800 mV, - 1.4 V | 2.8 nC, - 4.5 nC | Enhancement | ||||
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2,915
In-stock
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Diodes Incorporated | MOSFET 20V Complementary 12Vgs 0.6mm ESD | +/- 12 V, +/- 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 4.7 A, - 3.2 A | 23 mOhms, 59 mOhms | 350 mV, - 1.4 V | 15 nC, 18 nC | Enhancement | ||||
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2,480
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement | ||||
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VIEW | Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 3.57 A, - 2.5 A | 0.049 Ohms, 0.14 Ohms | 0.6 V, - 1.5 V | 2.5 nC, 3.5 nC | Enhancement |
