- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,129
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V, - 12 V | - 3.8 A, - 3.8 A | 37 mOhms, 37 mOhms | - 1 V, - 1 V | 17.9 nC, 17.9 nC | Enhancement | |||
|
GET PRICE |
2,358
In-stock
|
Diodes Incorporated | MOSFET MOSFET P-CHAN | +/- 8 V, +/- 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 6.04 A, - 6.04 A | 23 mOhms, 23 mOhms | - 1 V, - 1 V | 15.4 nC, 15.4 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V, - 12 V | - 3.8 A, - 3.8 A | 37 mOhms, 37 mOhms | - 1 V, - 1 V | 17.9 nC, 17.9 nC | Enhancement |