- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 75 A | 75 mOhms | 3 V | 290 nC | Enhancement | |||
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7
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 1000 V | 21 A | 380 mOhms | 3 V | 260 nC | Enhancement | |||
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628
In-stock
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onsemi | MOSFET NCH 10A 250V TP(IPAK | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 10 A | 320 mOhms | 2.5 V | 16 nC | Enhancement |
