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91 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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4,345
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
|
|
GET PRICE |
46,790
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Ch adv QFET V2 Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15 A | 140 mOhms | Enhancement | |||||
|
|
5,468
In-stock
|
Fairchild Semiconductor | MOSFET UniFET 200V | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 120 mOhms | UniFET | ||||||
|
|
2,429
In-stock
|
Fairchild Semiconductor | MOSFET SINGLE N-CH 200V ULTRAFET TRENCH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 66 mOhms | Enhancement | ||||||
|
|
154,200
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-CHANNEL MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||
|
|
GET PRICE |
182,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | ||||
|
|
2,319
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 22.9 mOhms | Enhancement | PowerTrench | |||||
|
|
1,121
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 27 mOhms | Enhancement | PowerTrench | |||||
|
|
14,020
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||
|
|
5,332
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
|
|
2,772
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | |||||
|
|
1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
|
2,800
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 14A 235mOhm 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 165 mOhms | 25 nC | Enhancement | ||||||
|
|
4,520
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch 200V 4.6A 0.8OHM | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 800 mOhms | |||||||
|
|
4,492
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 1.4 Ohms | Enhancement | ||||||
|
|
3,532
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/200V/10A/QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.8 A | 360 mOhms | Enhancement | ||||||
|
|
3,308
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
|
|
GET PRICE |
16,840
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
|
|
1,900
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||||
|
|
1,606
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | Enhancement | UniFET | |||||
|
|
1,531
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | ||||||
|
|
1,823
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19.4 A | 150 mOhms | Enhancement | QFET | |||||
|
|
1,503
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 28 A | 82 mOhms | Enhancement | QFET | |||||
|
|
641
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 56 mOhms | Enhancement | ||||||
|
|
904
In-stock
|
Fairchild Semiconductor | MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | 5 V | 20 nC | Enhancement | UniFET | |||
|
|
1,018
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 61 A | 41 mOhms | Enhancement | ||||||
|
|
614
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
|
|
GET PRICE |
51,300
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | ||||
|
|
81,700
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 62A 26mOhm 70nC Qg | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
|
|
6,773
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 600 mA | 2.2 Ohms | 3.9 nC | Enhancement |
