- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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31,212
In-stock
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Nexperia | MOSFET TAPE13 PWR-MOS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||
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6,795
In-stock
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IR / Infineon | MOSFET MOSFT 100V 4.5A 60mOhm 33nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 33 nC | ||||||||
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3,066
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | ||||
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2,262
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
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GET PRICE |
60,200
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 65A 9.3mOhm 83nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | ||||||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 100V SINGLE N-CH 9mOhms 260nC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 141 A | 9 mOhms | 260 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | ||||||
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59
In-stock
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IR / Infineon | MOSFET MOSFT 100V 97A 9.3mOhm 81nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC |