- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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615
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | |||||
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78
In-stock
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Toshiba | MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | DTMOSIV | |||||
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121
In-stock
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Toshiba | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | ||||||
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1,500
In-stock
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STMicroelectronics | MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 8.4 A | 680 mOhms | 3.75 V | 42 nC | Enhancement | |||||
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998
In-stock
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STMicroelectronics | MOSFET N-channel 620 V 8.4 A TO-220 TO-22 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 8.4 A | 680 mOhms | 42 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 10 A | 680 mOhms | 4 V | 51 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 10 A | 680 mOhms | 4 V | 51 nC |