- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,490
In-stock
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Fairchild Semiconductor | MOSFET 600V 2.4A N-Channel Q-FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.4 Ohms | 10.5 nC | Enhancement | QFET | |||||
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968
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | |||||
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818
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | |||||
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697
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | |||||
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445
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | |||||
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206
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | ||||||
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250
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.2 A | 1 Ohms | 2.5 V | 10.5 nC | Enhancement | |||||
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GET PRICE |
85,000
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.2 A | 1.02 Ohms | 2.5 V | 10.5 nC | Enhancement |