- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
886
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 26 A | 120 mOhms | 4 V | 44 nC | Enhancement | ||||
|
554
In-stock
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1.7 kV | 2.6 A | 7 Ohms | 3 V | 44 nC | Enhancement | ||||
|
214
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 0.190 16A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 220 mOhms | 3 V | 44 nC | |||||
|
304
In-stock
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1700 V | 2.6 A | 13 Ohms | 3 V | 44 nC | Enhancement |