- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,748
In-stock
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STMicroelectronics | MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 2.5 A | 2.1 Ohms | 3.75 V | 11 nC | ||||||
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920
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A PAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 0.95 Ohm 6A SuperFREDmesh3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.15 Ohms | 33 nC | Enhancement | ||||
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953
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC |
