- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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615
In-stock
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STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | |||||
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1,503
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 28 A | 82 mOhms | Enhancement | QFET | ||||||
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814
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 28 A | 60 mOhms | Enhancement | UniFET | ||||||
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335
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 155 mOhms | Enhancement | UniFET | ||||||
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266
In-stock
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Fairchild Semiconductor | MOSFET 500V 28A N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 175 mOhms | Enhancement | UniFET | ||||||
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10
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A | 30 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 28 A | 320 mOhms | 195 nC | HyperFET | |||||||
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134
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 28 A | 82 mOhms | Enhancement | QFET | ||||||
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30
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | |||||||
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43
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 28 Amps 500 V 0.20 W Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 200 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 28 Amps 500V 0.20 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 200 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 200 mOhms | Enhancement |