- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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41
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 66 A | 65 mOhms | Enhancement | HyperFET | |||||
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15
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 75 mOhms | 275 nC | HyperFET | |||||||
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25
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
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50
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V 0.04 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET |
