- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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40
In-stock
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IXYS | MOSFET 600V 48A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 135 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 140 mOhms | 140 nC | HyperFET | |||||||
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65
In-stock
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IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 48 A | 76 mOhms | 5 V | 190 nC | Enhancement | Polar3, HiperFET | ||||
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VIEW | IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | 4.5 V | 60 nC | Enhancement | Trench | |||
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2
In-stock
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IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 140 mOhms | 140 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 600V 48A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 135 mOhms | Enhancement | HyperFET |
