- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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2,262
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | ||||
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573
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 59 A | 49 mOhms | Enhancement | |||||
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2,670
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 59 A | 56 mOhms | Enhancement | |||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC |