- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,744
In-stock
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Fairchild Semiconductor | MOSFET 1000V/1.6A/N-CH | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
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4,990
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 5.3 Ohms | Enhancement | ||||||
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733
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 4.5 V | 8.8 nC | SuperFET II | |||||
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39
In-stock
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IXYS | MOSFET 1.6 Amps 500 V 6 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 6.5 Ohms | 5.5 V | 3.9 nC | Enhancement | PolarHV | |||
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18
In-stock
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IXYS | MOSFET 1.6 Amps 500 V 6 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 6.5 Ohms | 5.5 V | 3.9 nC | Enhancement |
