- Manufacture :
- Mounting Style :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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97
In-stock
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IXYS | MOSFET 600V 64A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 96 mOhms | Enhancement | HyperFET | ||||||
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613
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 42 mOhms | Enhancement | PowerTrench | ||||||
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466
In-stock
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IXYS | MOSFET 50 Amps 250V 50 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | ||||||||
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146
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | ||||
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192
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 120 mOhms | 5 V | 85 nC | Enhancement | Polar3, HiperFET | ||||
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52
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 72 mOhms | 200 nC | HyperFET | ||||||||
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88
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | ||||
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75
In-stock
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IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | |||||||
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81
In-stock
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IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | |||||||
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55
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | ||||||||
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54
In-stock
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IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | |||||||
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35
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | ||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | ||||||||
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20
In-stock
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IXYS | MOSFET 50Amps 250V | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | |||||
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15
In-stock
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IXYS | MOSFET 50 Amps 250V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 50 Amps 800V | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 50 A | 150 mOhms | Enhancement | HyperFET |