- Manufacture :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
21 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
484
In-stock
|
IXYS | MOSFET 500V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | ||||||
|
150
In-stock
|
IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | 6.5 V | 310 nC | Enhancement | Polar, HiPerFET | ||||
|
140
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 30 A | 140 mOhms | Enhancement | QFET | ||||||
|
35
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 62 nC | HyperFET | ||||||||
|
7
In-stock
|
IXYS | MOSFET 30 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | Enhancement | |||||||
|
25
In-stock
|
IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 250V 3... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | Si | N-Channel | 250 V | 30 A | 60 mOhms | 4.5 V | 78 nC | |||||||
|
130
In-stock
|
IXYS | MOSFET 600V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | ||||||
|
9
In-stock
|
IXYS | MOSFET HiperFET Pwr MOSFET Q3-Class | 30 V | SMD/SMT | SMPD-24 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 30 A | 245 mOhms | 264 nC | HiPerFET | |||||||
|
110
In-stock
|
IXYS | MOSFET 500V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | ||||||
|
10
In-stock
|
IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | Enhancement | HyperFET | ||||||
|
48
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 62 nC | HyperFET | ||||||||
|
20
In-stock
|
IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | ||||
|
18
In-stock
|
IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | |||||||
|
30
In-stock
|
IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | |||||||
|
10
In-stock
|
IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV | ||||
|
VIEW | IXYS | MOSFET 30 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | 5 V | 545 nC | Enhancement | |||||
|
VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 600V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | ||||
|
VIEW | IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV |