- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
30 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,093
In-stock
|
STMicroelectronics | MOSFET N-CH 1500V HI-VOLT PWRMESH PWR MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 8 A | 2.5 Ohms | Enhancement | |||||||
|
1,071
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | ||||||
|
1,323
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | ||||||
|
874
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | ||||||
|
1,021
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Chan Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | |||||||
|
84,700
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel PowerTrench MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 265 mOhms | Enhancement | |||||||
|
1,049
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | QFET | ||||||
|
950
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 0.65Ohm typ 8A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | ||||||
|
2,400
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | ||||||
|
479
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | ||||||
|
179
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.9 Ohms | Enhancement | QFET | ||||||
|
92,000
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | ||||||
|
136
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 750 mOhms | Enhancement | QFET | ||||||
|
310
In-stock
|
Fairchild Semiconductor | MOSFET HIGH VOLTAGE | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | |||||||
|
160
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
227
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
136
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
100
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
150
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 2.5 V | 12 nC | Enhancement | |||||
|
200
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
75
In-stock
|
IXYS | MOSFET 8 Amps 500V 0.8 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | Enhancement | |||||||
|
4
In-stock
|
IXYS | MOSFET 8 Amps 1500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement | ||||||
|
42
In-stock
|
IXYS | MOSFET POWER MOSFET N-CHANNEL 500V 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | 5.5 V | 20 nC | Enhancement | PolarHV | ||||
|
175
In-stock
|
IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
71
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | DTMOSIV | |||||
|
709
In-stock
|
STMicroelectronics | MOSFET N-Ch, 900V-1.1ohms Zener SuperMESH 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.3 Ohms | Enhancement | |||||||
|
421
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 8.0 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.3 Ohms | Enhancement | |||||||
|
200
In-stock
|
IXYS | MOSFET 700V/4A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement | |||||
|
VIEW | Fairchild Semiconductor | MOSFET 500V 8A N-Chan UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 850 mOhms | 5 V | 18 nC | UniFET FRFET |