- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,814
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | ||||||
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52
In-stock
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IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | ||||
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1,595
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | UniFET | |||||
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890
In-stock
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STMicroelectronics | MOSFET N-Ch, 650V-1.2ohms Zener SuperMESH 5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.6 Ohms | Enhancement | ||||||
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10
In-stock
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IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | ||||
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464
In-stock
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Fairchild Semiconductor | MOSFET UNIFET 500V N-CHANNEL MOSFET, GREEN EMC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.5 Ohms | 5 V | 12.8 nC | |||||
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1,765
In-stock
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onsemi | MOSFET NFET T0220FP 500V 5A 1.5R | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.25 Ohms | 3 V to 4.5 V | 18.5 nC | |||||
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190
In-stock
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IXYS | MOSFET 5 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | HyperFET | ||||||
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75
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFETs | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 5 A | 1.65 Ohms | 5 V | 6.9 nC | Enhancement | Polar3, HiperFET | ||||
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150
In-stock
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IXYS | MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.7 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET Polar Power MOSFET HiPerFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 6 V | 33.4 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 5 Amp | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.7 Ohms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-Ch 900V 5A Rdson 2.5 Ohm | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5 A | 2 Ohms | |||||||
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VIEW | Toshiba | MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5 A | 2.2 Ohms | 25 nC |
