- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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964
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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985
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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1,028
In-stock
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STMicroelectronics | MOSFET N-channel 1500 V PowerMesh | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 4 A | 7 Ohms | Enhancement | ||||||
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941
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||
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582
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 3 V | 17 nC | Enhancement | ||||
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351
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4 A | 4.2 Ohms | Enhancement | QFET | |||||
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502
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel FRFET, Ultra FRFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.65 Ohms | 5 V | 11 nC | UniFET FRFET | ||||||
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227
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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310
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 4 V | 17 nC | Enhancement | ||||
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34,000
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4 A | 4.2 Ohms | Enhancement | QFET | |||||
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185
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | ||||
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365
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | ||||
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140
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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105
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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40
In-stock
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IXYS | MOSFET PolarHV Power MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 4 A | 2 Ohms | 5.5 V | 13 nC | Enhancement | PolarHV | ||||
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935
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | Enhancement | ||||||
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1,581
In-stock
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STMicroelectronics | MOSFET PowerMESH MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 4 A | 5 Ohms | Enhancement | ||||||
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29
In-stock
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IXYS | MOSFET 7 Amps 600V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 1.1 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 4.0 Amps 600 V 1.9 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | Enhancement | ||||||
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2,613
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | Enhancement | ||||||
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GET PRICE |
20,000
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | 18.8 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET PowerMESH Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 950V 3 Ohm 4A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 4 A | 3 Ohms | 19 nC |
