- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
7,660
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | Enhancement | ||||
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2,200
In-stock
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STMicroelectronics | MOSFET N-channel 800 V 0.25 17A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 70 nC | ||||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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351
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STMicroelectronics | MOSFET N-channel 800 V MDMesh | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 295 mOhms | 70 nC | ||||||
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58
In-stock
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Fairchild Semiconductor | MOSFET UniFET2 600V | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 17 A | 290 mOhms | UniFET | ||||||
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9
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IXYS | MOSFET 17 Amps 1200V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 17 A | 990 mOhms | 5 V | 270 nC | Enhancement | ||||
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23
In-stock
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STMicroelectronics | MOSFET N-channel 800 V MDMesh | 30 V | Through Hole | TO-247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 295 mOhms | 70 nC | ||||||
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VIEW | IXYS | MOSFET 17 Amps 1200V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 17 A | 990 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 17 A | 190 mOhms | 46 nC | Enhancement | |||||
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820
In-stock
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STMicroelectronics | MOSFET N-channel 650 V MDMesh M5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 150 mOhms | 50 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 168 mOhms | 3 V | 46 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-ch 600 V 0.168 Ohm 17 A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 17 A | 190 mOhms | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 500V 0.23 Ohm 17A Zener SuperMESH | 30 V | Through Hole | TO-281-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC |
