- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11
In-stock
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IXYS | MOSFET High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 2.5 A | 6 Ohms | 5 V | 44.5 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N Ch 24V 120A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2.5 A | 6 Ohms | Enhancement | ||||||
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1,009
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 800 mA | 6 Ohms | Enhancement | CoolMOS |
