- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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219
In-stock
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IXYS | MOSFET MOSFET 650V/80A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 80 A | 40 mOhms | 2.7 V | 143 nC | Enhancement | |||||
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907
In-stock
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Fairchild Semiconductor | MOSFET N-CH/150V/45A/Q-FETI | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 45 A | 40 mOhms | Enhancement | QFET | ||||||
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990
In-stock
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Fairchild Semiconductor | MOSFET N-CH/150V/45A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 45 A | 40 mOhms | Enhancement | QFET | ||||||
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461
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 55 A | 40 mOhms | Enhancement | QFET | ||||||
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11
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 33V 33... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 33 A | 40 mOhms | 4.5 V | 90 nC | |||||||
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49
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | SMD/SMT | TO-268-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | ||||||
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34
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 66 Amps 200V 0.04 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET |