- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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175
In-stock
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IXYS | MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
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45
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 62 A | 140 mOhms | 270 nC | HyperFET | |||||||
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37
In-stock
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IXYS | MOSFET 22 Amps 1000V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
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20
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/49A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 800 V | 49 A | 140 mOhms | 270 nC | HyperFET | |||||||
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9
In-stock
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IXYS | MOSFET 17 Amps 1200V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 17 A | 990 mOhms | 5 V | 270 nC | Enhancement |
