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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF7N105K5
1+
$2.920
10+
$2.480
100+
$2.150
250+
$2.040
RFQ
941
In-stock
STMicroelectronics MOSFET POWER MOSFET 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1050 V 4 A 1.4 Ohms 3 V 17 nC Enhancement
STW7N105K5
1+
$3.180
10+
$2.700
100+
$2.350
250+
$2.230
RFQ
582
In-stock
STMicroelectronics MOSFET POWER MOSFET 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1050 V 4 A 2 Ohms 3 V 17 nC Enhancement
STP7N105K5
1+
$2.780
10+
$2.370
100+
$2.050
250+
$1.950
RFQ
310
In-stock
STMicroelectronics MOSFET POWER MOSFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1050 V 4 A 2 Ohms 4 V 17 nC Enhancement
STF5N52K3
2000+
$0.406
3000+
$0.360
10000+
$0.347
25000+
$0.336
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 525 V 4.4 A 1.5 Ohms   17 nC Enhancement
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