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28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,641
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||||
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2,262
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
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2,555
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
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614
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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384
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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284
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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272
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | |||||
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825
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 24 A | 82 mOhms | 5 V | 30 nC | Enhancement | ||||
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807
In-stock
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IXYS | MOSFET 44 Amps 100V 25.0 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 85 V | 44 A | 22 mOhms | 4.5 V | 33 nC | Enhancement | TrenchMV | |||
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227
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 2 A | 2.3 Ohms | 3 V | 4.3 nC | Enhancement | |||||
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227
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
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136
In-stock
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IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||
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219
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 3 V to 5.5 V | 19 nC | Enhancement | ||||
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151
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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277
In-stock
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IXYS | MOSFET 1.4 Amps 600 V 8 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 9 Ohms | Enhancement | ||||||
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114
In-stock
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IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | |||
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177
In-stock
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IXYS | MOSFET 3 Amps 600V 3 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | |||
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60
In-stock
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IXYS | MOSFET 2.4 Amps 500 V 3.5 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 3.75 Ohms | Enhancement | ||||||
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76
In-stock
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IXYS | MOSFET 5 Amps 500V 1.3 Ohms Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | |||
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40
In-stock
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IXYS | MOSFET PolarHV Power MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 4 A | 2 Ohms | 5.5 V | 13 nC | Enhancement | PolarHV | ||||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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18
In-stock
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IXYS | MOSFET 1.6 Amps 500 V 6 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 6.5 Ohms | 5.5 V | 3.9 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | ||||||
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343
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 57 nC | Enhancement | |||||
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3
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement |
