- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,470
In-stock
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STMicroelectronics | MOSFET N-CH 800V 0.8Ohm typ 6A Zener-protected | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 3 V | 16.5 nC | Enhancement | |||||
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200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 12 A | 410 mOhms | 3 V | 30 nC | Enhancement | |||||
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1,500
In-stock
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STMicroelectronics | MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 8.4 A | 680 mOhms | 3.75 V | 42 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620 V 1.7 Ohm 3.8 A, SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.7 Ohms | 3.75 V | 22 nC | Enhancement | SuperMesh | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 0.75 Ohm 10 A Zener-protect | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 3 V | 42 nC | Enhancement | |||||
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1,499
In-stock
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STMicroelectronics | MOSFET N-Ch 620 V 0.95 Ohm 5.5 A SuperMESH | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 950 mOhms | 3.75 V | 34 nC | Enhancement | SuperMesh | ||||
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466
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.95 Ohm typ 6A Zener-protect | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 5 V | 13.4 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.65 Ohm 10A SuperMESH | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 50 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.48 Ohm 13A SuperMESH | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 500V 0.23 Ohm 17A Zener SuperMESH | 30 V | Through Hole | TO-281-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC |