- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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232
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | Enhancement | HyperFET | |||||
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18
In-stock
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IXYS | MOSFET 42 Amps 800V 0.15 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 40 A | 150 mOhms | 5 V | 250 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 140 nC | HyperFET | ||||||
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2
In-stock
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IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 5 V | 150 nC | Enhancement | PolarHV, HiPerFET | |||
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20
In-stock
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IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 5 V | 105 nC | Enhancement | PolarHV, HiPerFET | |||
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VIEW | IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET |
