- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,728
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 3.6 Ohms | Enhancement | QFET | |||||
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1,549
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 3.6 Ohms | Enhancement | ||||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 3.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 1.4 Ohms | 3 V | 23 nC | CoolMOS | ||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 2.8 Ohms | Enhancement |
