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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	FQA10N80C_F109	1+ $2.850 10+ $2.420 100+ $2.100 250+ $1.990		PDF RFQ	278 In-stock	Fairchild Semiconductor	MOSFET 800V N-Ch QFET Advance	30 V	Through Hole	TO-3PN-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	10 A	1.1 Ohms			Enhancement	QFET
	IXFA10N80P	1+ $3.000 10+ $2.550 100+ $2.210 250+ $2.100		PDF RFQ	105 In-stock	IXYS	MOSFET 10 Amps 800V 1.1 Rds	30 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	10 A	1.1 Ohms			Enhancement	HyperFET, PolarHV
	IXFH10N80P	1+ $3.840 10+ $3.270 100+ $2.830 250+ $2.690		PDF RFQ	62 In-stock	IXYS	MOSFET 10 Amps 800V 1.1 Rds	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	10 A	1.1 Ohms	5.5 V	40 nC	Enhancement	PolarHV, HiPerFET
	IXFP10N80P	1+ $4.080 10+ $3.470 100+ $3.010 250+ $2.850		PDF RFQ	59 In-stock	IXYS	MOSFET 10 Amps 800V 1.1 Rds	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	10 A	1.1 Ohms	5.5 V	40 nC	Enhancement	PolarHV, HiPerFET

FQA10N80C_F109

FQA10N80C_F109

Fairchild Semiconductor

MOSFET 800V N-Ch QFET Advance

Stock : 278

1+: $2.850

10+: $2.420

100+: $2.100

250+: $1.990

IXFA10N80P

IXFA10N80P

IXYS

MOSFET 10 Amps 800V 1.1 Rds

Stock : 105

1+: $3.000

10+: $2.550

100+: $2.210

250+: $2.100

IXFH10N80P

IXFH10N80P

IXYS

MOSFET 10 Amps 800V 1.1 Rds

Stock : 62

1+: $3.840

10+: $3.270

100+: $2.830

250+: $2.690

IXFP10N80P

IXFP10N80P

IXYS

MOSFET 10 Amps 800V 1.1 Rds

Stock : 59

1+: $4.080

10+: $3.470

100+: $3.010

250+: $2.850

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