- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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721
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
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468
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
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112,000
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
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26
In-stock
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 300 mOhms | 140 nC | HyperFET |
